Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment

Jian Huang Lin, Jian Jhou Zeng, Yow Jon Lin

研究成果: Article

24 引文 斯高帕斯(Scopus)

摘要

Developing better contacts on Si is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes. The graphene/n-type Si Schottky diode without H2O2 treatment shows a poor rectifying behavior with an ideality factor (η) of 3.5 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with H2O2 treatment shows a good rectifying behavior with η of 1.9 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H2O2 treatment.

原文English
頁(從 - 到)582-586
頁數5
期刊Thin Solid Films
550
DOIs
出版狀態Published - 2014 一月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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