Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment

Jian Huang Lin, Jian Jhou Zeng, Yow Jon Lin

研究成果: Article

24 引文 (Scopus)

摘要

Developing better contacts on Si is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes. The graphene/n-type Si Schottky diode without H2O2 treatment shows a poor rectifying behavior with an ideality factor (η) of 3.5 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with H2O2 treatment shows a good rectifying behavior with η of 1.9 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H2O2 treatment.

原文English
頁(從 - 到)582-586
頁數5
期刊Thin Solid Films
550
DOIs
出版狀態Published - 2014 一月 1

指紋

Graphite
Schottky diodes
Graphene
graphene
Diodes
leakage
electronics
Interface states
Defect density
defects
Passivation
passivity
Electric properties
Demonstrations
electrical properties
conduction
Fabrication
Defects
fabrication

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

引用此文

@article{eb46ba36e11e408e996bf631c91f139f,
title = "Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment",
abstract = "Developing better contacts on Si is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes. The graphene/n-type Si Schottky diode without H2O2 treatment shows a poor rectifying behavior with an ideality factor (η) of 3.5 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with H2O2 treatment shows a good rectifying behavior with η of 1.9 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H2O2 treatment.",
author = "Lin, {Jian Huang} and Zeng, {Jian Jhou} and Lin, {Yow Jon}",
year = "2014",
month = "1",
day = "1",
doi = "10.1016/j.tsf.2013.11.079",
language = "English",
volume = "550",
pages = "582--586",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment. / Lin, Jian Huang; Zeng, Jian Jhou; Lin, Yow Jon.

於: Thin Solid Films, 卷 550, 01.01.2014, p. 582-586.

研究成果: Article

TY - JOUR

T1 - Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment

AU - Lin, Jian Huang

AU - Zeng, Jian Jhou

AU - Lin, Yow Jon

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Developing better contacts on Si is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes. The graphene/n-type Si Schottky diode without H2O2 treatment shows a poor rectifying behavior with an ideality factor (η) of 3.5 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with H2O2 treatment shows a good rectifying behavior with η of 1.9 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H2O2 treatment.

AB - Developing better contacts on Si is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes. The graphene/n-type Si Schottky diode without H2O2 treatment shows a poor rectifying behavior with an ideality factor (η) of 3.5 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with H2O2 treatment shows a good rectifying behavior with η of 1.9 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H2O2 treatment.

UR - http://www.scopus.com/inward/record.url?scp=84890313600&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890313600&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2013.11.079

DO - 10.1016/j.tsf.2013.11.079

M3 - Article

AN - SCOPUS:84890313600

VL - 550

SP - 582

EP - 586

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -