Electrode design optimization of a CMOS fringing-field capacitive sensor

Yu Ting Li, Yen Lin Tzeng, Chih Ming Chao, Kerwin Wang

研究成果: Conference contribution

1 引文 (Scopus)

摘要

The capacitance of a micro-capacitive-sensor is mainly depends on its electrode structures, electrode arrangement and the dielectric strength of its surrounding. This paper presents a novel electrode design to enhance the fringing-field and to increase the capacitance of a CMOS MEMS capacitive sensor. The design optimization process is assisted by COMSOL, a multi-physics finite-element simulation tool. The design goal is to maximize the fringing-field of capacitive sensor. The capacitor has been built with a VLSI Schmitt trigger, and temperature compensator to probe the capacitance. The experiment results show that proposed capacitor can achieve the capacitance to 75.2 pF.

原文English
主出版物標題2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
頁面603-606
頁數4
DOIs
出版狀態Published - 2012 六月 1
事件7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 - Kyoto, Japan
持續時間: 2012 三月 52012 三月 8

出版系列

名字2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012

Other

Other7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
國家Japan
城市Kyoto
期間12-03-0512-03-08

指紋

Capacitive sensors
Capacitance
Electrodes
Capacitors
MEMS
Physics
Design optimization
Experiments
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering (miscellaneous)

引用此文

Li, Y. T., Tzeng, Y. L., Chao, C. M., & Wang, K. (2012). Electrode design optimization of a CMOS fringing-field capacitive sensor. 於 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 (頁 603-606). [6196848] (2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012). https://doi.org/10.1109/NEMS.2012.6196848
Li, Yu Ting ; Tzeng, Yen Lin ; Chao, Chih Ming ; Wang, Kerwin. / Electrode design optimization of a CMOS fringing-field capacitive sensor. 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012. 2012. 頁 603-606 (2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012).
@inproceedings{c0118b1df0f54f2e94834fc1a0bf2ba9,
title = "Electrode design optimization of a CMOS fringing-field capacitive sensor",
abstract = "The capacitance of a micro-capacitive-sensor is mainly depends on its electrode structures, electrode arrangement and the dielectric strength of its surrounding. This paper presents a novel electrode design to enhance the fringing-field and to increase the capacitance of a CMOS MEMS capacitive sensor. The design optimization process is assisted by COMSOL, a multi-physics finite-element simulation tool. The design goal is to maximize the fringing-field of capacitive sensor. The capacitor has been built with a VLSI Schmitt trigger, and temperature compensator to probe the capacitance. The experiment results show that proposed capacitor can achieve the capacitance to 75.2 pF.",
author = "Li, {Yu Ting} and Tzeng, {Yen Lin} and Chao, {Chih Ming} and Kerwin Wang",
year = "2012",
month = "6",
day = "1",
doi = "10.1109/NEMS.2012.6196848",
language = "English",
isbn = "9781467311243",
series = "2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012",
pages = "603--606",
booktitle = "2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012",

}

Li, YT, Tzeng, YL, Chao, CM & Wang, K 2012, Electrode design optimization of a CMOS fringing-field capacitive sensor. 於 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012., 6196848, 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012, 頁 603-606, 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012, Kyoto, Japan, 12-03-05. https://doi.org/10.1109/NEMS.2012.6196848

Electrode design optimization of a CMOS fringing-field capacitive sensor. / Li, Yu Ting; Tzeng, Yen Lin; Chao, Chih Ming; Wang, Kerwin.

2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012. 2012. p. 603-606 6196848 (2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012).

研究成果: Conference contribution

TY - GEN

T1 - Electrode design optimization of a CMOS fringing-field capacitive sensor

AU - Li, Yu Ting

AU - Tzeng, Yen Lin

AU - Chao, Chih Ming

AU - Wang, Kerwin

PY - 2012/6/1

Y1 - 2012/6/1

N2 - The capacitance of a micro-capacitive-sensor is mainly depends on its electrode structures, electrode arrangement and the dielectric strength of its surrounding. This paper presents a novel electrode design to enhance the fringing-field and to increase the capacitance of a CMOS MEMS capacitive sensor. The design optimization process is assisted by COMSOL, a multi-physics finite-element simulation tool. The design goal is to maximize the fringing-field of capacitive sensor. The capacitor has been built with a VLSI Schmitt trigger, and temperature compensator to probe the capacitance. The experiment results show that proposed capacitor can achieve the capacitance to 75.2 pF.

AB - The capacitance of a micro-capacitive-sensor is mainly depends on its electrode structures, electrode arrangement and the dielectric strength of its surrounding. This paper presents a novel electrode design to enhance the fringing-field and to increase the capacitance of a CMOS MEMS capacitive sensor. The design optimization process is assisted by COMSOL, a multi-physics finite-element simulation tool. The design goal is to maximize the fringing-field of capacitive sensor. The capacitor has been built with a VLSI Schmitt trigger, and temperature compensator to probe the capacitance. The experiment results show that proposed capacitor can achieve the capacitance to 75.2 pF.

UR - http://www.scopus.com/inward/record.url?scp=84861553038&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861553038&partnerID=8YFLogxK

U2 - 10.1109/NEMS.2012.6196848

DO - 10.1109/NEMS.2012.6196848

M3 - Conference contribution

AN - SCOPUS:84861553038

SN - 9781467311243

T3 - 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012

SP - 603

EP - 606

BT - 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012

ER -

Li YT, Tzeng YL, Chao CM, Wang K. Electrode design optimization of a CMOS fringing-field capacitive sensor. 於 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012. 2012. p. 603-606. 6196848. (2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012). https://doi.org/10.1109/NEMS.2012.6196848