Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

J. D. Hwang, C. C. Lin, Wei-Li Chen

研究成果: Article

8 引文 (Scopus)

摘要

A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2 × 10 17 cm -3 ) having a specific contact resistance of 4.2 × 10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/N-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy.

原文English
文章編號044908
期刊Journal of Applied Physics
100
發行號4
DOIs
出版狀態Published - 2006 九月 11

指紋

gallium nitrides
indium oxides
tin oxides
oxide films
electrical properties
electric contacts
sputtering
contact resistance
electron tunneling
x ray spectroscopy
oxygen atoms
depletion
photoelectron spectroscopy
nitrogen
electrical resistivity
oxygen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

引用此文

@article{ec3b37d2f39447f6928b1cb06b9a7417,
title = "Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN",
abstract = "A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2 × 10 17 cm -3 ) having a specific contact resistance of 4.2 × 10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/N-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy.",
author = "Hwang, {J. D.} and Lin, {C. C.} and Wei-Li Chen",
year = "2006",
month = "9",
day = "11",
doi = "10.1063/1.2336978",
language = "English",
volume = "100",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN. / Hwang, J. D.; Lin, C. C.; Chen, Wei-Li.

於: Journal of Applied Physics, 卷 100, 編號 4, 044908, 11.09.2006.

研究成果: Article

TY - JOUR

T1 - Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

AU - Hwang, J. D.

AU - Lin, C. C.

AU - Chen, Wei-Li

PY - 2006/9/11

Y1 - 2006/9/11

N2 - A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2 × 10 17 cm -3 ) having a specific contact resistance of 4.2 × 10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/N-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy.

AB - A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2 × 10 17 cm -3 ) having a specific contact resistance of 4.2 × 10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/N-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=33748303085&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748303085&partnerID=8YFLogxK

U2 - 10.1063/1.2336978

DO - 10.1063/1.2336978

M3 - Article

AN - SCOPUS:33748303085

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

M1 - 044908

ER -