Electrical characteristics of double-barrier resonant tunneling structures with different electrode doping concentrations

Jenq-Shinn Wu, C. Y. Chang, C. P. Lee, K. H. Chang, D. G. Liu

研究成果: Article

6 引文 (Scopus)

摘要

The electrical characteristics of AlGaAs/GaAs double-barrier resonant tunneling structures with various electrode doping concentrations have been studied. It was found that the peak current and the valley current are not sensitive to the change in the doping level of the electrodes. The peak-current voltage and the valley-current voltage, however, increase when the electrode doping level is lowered. These behaviors are explained using the band-bending effect in the electrodes. For devices with lightly doped or undoped electrodes, the quantum size effect in the accumulation layer due to the strong band bending causes additional kinks in the current-voltage characteristics. They are attributed to the resonant tunneling of electrons from the quantized levels in the accumulation layer. The quantum effect also accounts for the improved negative differential resistance behavior.

原文English
頁(從 - 到)403-411
頁數9
期刊Solid State Electronics
34
發行號4
DOIs
出版狀態Published - 1991 一月 1

指紋

Resonant tunneling
resonant tunneling
Doping (additives)
Electrodes
electrodes
valleys
electric potential
Electric potential
Current voltage characteristics
aluminum gallium arsenides
Electrons
causes
electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

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Electrical characteristics of double-barrier resonant tunneling structures with different electrode doping concentrations. / Wu, Jenq-Shinn; Chang, C. Y.; Lee, C. P.; Chang, K. H.; Liu, D. G.

於: Solid State Electronics, 卷 34, 編號 4, 01.01.1991, p. 403-411.

研究成果: Article

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AU - Chang, C. Y.

AU - Lee, C. P.

AU - Chang, K. H.

AU - Liu, D. G.

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