Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes with Composition-Graded Configuration

Jih Yuan Chang, Hui Tzu Chang, Ya Hsuan Shih, Fang Ming Chen, Man Fang Huang, Yen Kuang Kuo

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

Characteristics of deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated. DUV LEDs possess severe electron current leakage due to insufficient carrier confinement of the active region. Simply increasing the Al composition of quantum barriers (QBs) or electron-blocking layer (EBL) to enlarge the relevant potential barrier height would arise unexpected detrimental effects, such as extra polarization effect or more obstruction for hole injection. In this paper, band-engineered composition-graded QBs and EBL are proposed to resolve this issue. Simulation results show that, with appropriate designs, the leakage current of DUV LEDs could be effectively diminished with just slight side effects.

原文English
文章編號8082105
頁(從 - 到)4980-4984
頁數5
期刊IEEE Transactions on Electron Devices
64
發行號12
DOIs
出版狀態Published - 2017 十二月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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