摘要
Efficiency enhancement of blue InGaN/GaN light-emitting diodes (LEDs) with shallow first well is investigated. Energy band diagrams, carrier concentrations in quantum wells, spontaneous emission spectra, light-current-voltage performance curves, and internal quantum efficiency are studied. Simulation results show that the LED is markedly improved when regular first well is replaced by shallow first well due to reduced polarization field and thereby enhanced injection efficiency of carriers in quantum wells. The proposed structure is beneficial for the blue InGaN LED even at a high level of current injection.
| 原文 | English |
|---|---|
| 文章編號 | 6310011 |
| 頁（從 - 到） | 2084-2086 |
| 頁數 | 3 |
| 期刊 | IEEE Photonics Technology Letters |
| 卷 | 24 |
| 發行號 | 22 |
| DOIs | |
| 出版狀態 | Published - 2012 十一月 26 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering