Efficiency enhancement of blue InGaN light-emitting diodes with shallow first well

Tsun Hsin Wang, Yen Kuang Kuo

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Efficiency enhancement of blue InGaN/GaN light-emitting diodes (LEDs) with shallow first well is investigated. Energy band diagrams, carrier concentrations in quantum wells, spontaneous emission spectra, light-current-voltage performance curves, and internal quantum efficiency are studied. Simulation results show that the LED is markedly improved when regular first well is replaced by shallow first well due to reduced polarization field and thereby enhanced injection efficiency of carriers in quantum wells. The proposed structure is beneficial for the blue InGaN LED even at a high level of current injection.

原文English
文章編號6310011
頁(從 - 到)2084-2086
頁數3
期刊IEEE Photonics Technology Letters
24
發行號22
DOIs
出版狀態Published - 2012 十一月 26

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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