Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes

Jih Yuan Chang, Man Fang Huang, Fang Ming Chen, Bo Ting Liou, Ya Hsuan Shih, Yen Kuang Kuo

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The impact of quantum barriers (QBs) and electron-blocking layers (EBL) on the output performance of deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated systematically. Specific LED structures with strain-compensated and p-staircase-interlayer configurations are proposed and explored in detail. Simulation results show that Al compositions of both QBs and EBL are critical to the capability of carrier confinement of the active region. A DUV LED structure with excellent output performance can be obtained provided that the QBs and EBL are properly designed via band engineering. Furthermore, LED structures without EBL are also investigated. If the DUV LED has well-designed deeper quantum wells, an excellent output performance can be maintained, even when the LED structure is without EBL.

原文English
文章編號075106
期刊Journal of Physics D: Applied Physics
51
發行號7
DOIs
出版狀態Published - 2018 一月 31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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