Effects of (NH4)2Sx treatment on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)

Yow Jon Lin, Hsing Cheng Chang, Bei Yuan Liu

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

The effects of (N H4) 2 Sx treatment on the current-voltage characteristics and interfacial properties of the indium tin oxide (ITO)/poly(3,4- ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT-PSS) samples have been investigated in this study. The authors found that (N H4) 2 Sx treatment could lead to the improvement of the interfacial stability of ITO/PEDOT-PSS samples. In addition, the current transport at the ITO/PEDOT-PSS interface is governed by the defects induced by interfacial reactions.

原文English
文章編號112112
期刊Applied Physics Letters
90
發行號11
DOIs
出版狀態Published - 2007 三月 23

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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