Effects of laser-induced recovery process on conductive property of SnO2:F thin films

Ming-Fei Chen, Keh Moh Lin, Yu Sen Ho

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

In this study, we developed a laser annealing process to enhance the electrical properties of SnO2:F (FTO) films. It is already known that in contrast to indium oxides or zinc oxides, the carrier mobility of FTO films is relatively lower. Thus, improving the mobility is a direct way to enhance the conductivity of FTO films. Furthermore, improving the crystal quality of the thin films is in turn a direct way to enhance the mobility effectively. Contrary to the high working temperatures of traditional annealing processes, the laser annealing process, with its focusing character, enables us to modify the crystal quality of oxide films on substrates with low-melting points. Using a self-built laser system, which consists of a Nd:YAG solid-state laser with a wavelength of 1064 nm and a beam shaper lens, we carried out a series of experiments to achieve the optimal laser annealing process. Hall, SEM, and XRD measurements were used to characterize the opto-electrical as well as the structural properties. As experimental results show, the tin oxide crystallites recovered well during the laser annealing process. By using a suitable beam profile and a proper laser intensity, the film resistivity was reduced from 7.19 ± 0.55 × 10-3 Ω cm to 6.70 ± 0.20 × 10-3 Ω cm while the carrier mobility was enhanced from 11.18 ± 0.29 cm2/V s to 11.71 ± 0.34 cm2/V s.

原文English
頁(從 - 到)127-131
頁數5
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
176
發行號2
DOIs
出版狀態Published - 2011 二月 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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