Effects of H2O2 treatment on the optoelectronic property of poly(3-hexylthiophene) doped with the reduced graphene oxide sheets/Si-nanowire arrays/n-type Si diodes

Yi Min Chin, Yow Jon Lin

研究成果: Article

8 引文 斯高帕斯(Scopus)

摘要

The effect of H2O2 treatment on the optoelectronic property of the poly(3-hexylthiophene) doped with reduced graphene oxide sheets (P3HT:RGO)/Si-nanowire (SiNW) arrays/n-type Si diode was examined. SiNW surface passivation influences device performance. Compared to P3HT:RGO/SiNWs/n-type Si diodes, P3HT:RGO/H2O2-treated SiNWs/n-type Si diodes exhibit much higher photoconductivity. The results revealed that SiNW surface passivation influences the photoconductivity by reducing the number of electron traps that serve to decrease the photocurrent time constant. High responsivity thus originates from efficient light absorption and carrier collection.

原文English
頁(從 - 到)232-236
頁數5
期刊Materials Chemistry and Physics
145
發行號1-2
DOIs
出版狀態Published - 2014 五月 15

    指紋

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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