Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices

Yow Jon Lin, Chang Lin Wu, Zun Yuan Ke, Hsing Cheng Chang

研究成果: Article

摘要

This study determines the effect of incorporating reduced graphene oxide (RGO) nanosheets into poly(methyl methacrylate) (PMMA) on the resistive switching (RS) mechanisms by measuring the current–voltage characteristics for Au/PMMA/heavily doped p-type Si (p+-Si) and Au/PMMA:RGO/p+-Si devices. The effect of RGO content on the RS properties is also determined. The Au/PMMA/p+-Si device exhibits set/reset–free current–voltage characteristics because of the insulating properties of PMMA. However, the Au/PMMA:RGO/p+-Si device exhibits RS behavior. Incorporating RGO into PMMA results in an increase in conductivity, the formation of PMMA–RGO interfaces and a significant increase in the trap density at the PMMA/RGO interfaces, so the RS performance is improved for Au/PMMA:RGO/p+-Si devices. It is shown that the current density for Au/PMMA:RGO/p+-Si devices is limited by the combined effect of ohmic conduction, space-charge-limited current conduction and trap-filled limited current conduction. An excess amount of RGO in PMMA does not result in any memory effect during the forward- and reverse-biased sweeps because there is a significant increase in the conductivity of PMMA:RGO film.

原文English
頁(從 - 到)1209-1214
頁數6
期刊Indian Journal of Physics
94
發行號8
DOIs
出版狀態Published - 2020 八月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

指紋 深入研究「Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices」主題。共同形成了獨特的指紋。

  • 引用此