We analyzed conditions for fabricating zero-bias polymer-stabilized liquid crystal (PSLC) pi cells. A high curing voltage effectively aligns LCs and the polymer networks formed perpendicular to the substrate surface after polymerization, making a cell a low dark state and approaching the saturation voltage rapidly. A low curing intensity generates sparse polymer networks, increasing the bending degree of LCs and therefore increasing the effective birefringence and associated bright state of the cell. A high curing voltage and a very low curing intensity are found to be effective in fabricating a zero-bias PSLC pi cell with a high bright state, a low dark state and therefore a steep transmission vs applied voltage (T-V) curve.
|頁（從 - 到）||5230-5232|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 2007 八月 6|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)