Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with AlGaN or AlInGaN electronic blocking layers

Shu Hsuan Chang, Jun Rong Chen, Chung Hsien Lee, Cheng Hong Yang

研究成果: Conference contribution

12 引文 斯高帕斯(Scopus)

摘要

The effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a ternary Al0.2Ga0.8N or a quaternary AlInGaN electronic blocking layer have been investigated numerically by employing an advanced device simulation program. The simulation results indicate that the characteristics of InGaN quantum-well laser can be improved by using the quaternary AlInGaN electronic blocking layer. When the aluminum and indium compositions in the AlInGaN electronic blocking layer are appropriately designed, the built-in charge density at the interface between the InGaN barrier and the AlInGaN electronic blocking layer can be reduced. Under this circumstance, the electron leakage and threshold current can be decreased obviously as compared with the laser structure with a conventional Al 0.2Ga0.8N electronic blocking layer when the built-in polarization is taken into account in our simulation. On the other hand, the AlInGaN electronic blocking layer also gives higher refractive index than the Al0.2Ga0.8N electronic blocking layer. Therefore, higher quantum-well optical confinement factor can be obtained by using the AlInGaN electronic blocking layer as well.

原文English
主出版物標題Optoelectronic Devices
主出版物子標題Physics, Fabrication, and Application III
DOIs
出版狀態Published - 2006 十二月 1
事件Optoelectronic Devices: Physics, Fabrication, and Application III - Boston, MA, United States
持續時間: 2006 十月 12006 十月 2

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
6368
ISSN(列印)0277-786X

Other

OtherOptoelectronic Devices: Physics, Fabrication, and Application III
國家United States
城市Boston, MA
期間06-10-0106-10-02

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • 引用此

    Chang, S. H., Chen, J. R., Lee, C. H., & Yang, C. H. (2006). Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with AlGaN or AlInGaN electronic blocking layers. 於 Optoelectronic Devices: Physics, Fabrication, and Application III [636813] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 6368). https://doi.org/10.1117/12.685910