Effects of Al doping on the responsivity of solar irradiation of devices that use ZnO nanoparticles

Yow Jon Lin, Yao Ming Chen

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4 引文 斯高帕斯(Scopus)

摘要

The effect of Al doping on the responsivity to solar irradiation and the response time for devices that use ZnO nanoparticles is studied. The incorporation of Al into ZnO nanoparticles leads to a reduction in the particle size, which causes an increase in the number of oxygen vacancies (VO) and the introduction of Al-ions into the lattice of ZnO. Al-doped ZnO nanoparticles are responsive because there is an increase in the visible-emission absorption. A correlation between the incorporation of Al, the VO density and the photocurrent is determined, which allows the sensitivity of ZnO nanoparticles to solar irradiation to be tuned.

原文English
頁(從 - 到)10205-10211
頁數7
期刊Journal of Materials Science: Materials in Electronics
28
發行號14
DOIs
出版狀態Published - 2017 七月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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