Effects of Al doping on the responsivity of solar irradiation of devices that use ZnO nanoparticles

Yow Jon Lin; Yao Ming Chen

doi:10.1007/s10854-017-6786-9

Effects of Al doping on the responsivity of solar irradiation of devices that use ZnO nanoparticles

Yow Jon Lin, Yao Ming Chen

光電科技研究所

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The effect of Al doping on the responsivity to solar irradiation and the response time for devices that use ZnO nanoparticles is studied. The incorporation of Al into ZnO nanoparticles leads to a reduction in the particle size, which causes an increase in the number of oxygen vacancies (V_O) and the introduction of Al-ions into the lattice of ZnO. Al-doped ZnO nanoparticles are responsive because there is an increase in the visible-emission absorption. A correlation between the incorporation of Al, the V_O density and the photocurrent is determined, which allows the sensitivity of ZnO nanoparticles to solar irradiation to be tuned.

原文	English
頁（從 - 到）	10205-10211
頁數	7
期刊	Journal of Materials Science: Materials in Electronics
卷	28
發行號	14
DOIs	https://doi.org/10.1007/s10854-017-6786-9
出版狀態	Published - 2017 七月 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/s10854-017-6786-9

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abstract = "The effect of Al doping on the responsivity to solar irradiation and the response time for devices that use ZnO nanoparticles is studied. The incorporation of Al into ZnO nanoparticles leads to a reduction in the particle size, which causes an increase in the number of oxygen vacancies (VO) and the introduction of Al-ions into the lattice of ZnO. Al-doped ZnO nanoparticles are responsive because there is an increase in the visible-emission absorption. A correlation between the incorporation of Al, the VO density and the photocurrent is determined, which allows the sensitivity of ZnO nanoparticles to solar irradiation to be tuned.",

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