Effect of thermal annealing on a-plane GaN grown on r-plane sapphire

Tsung-Shine Ko, Tien Chang Lu, Jung Ron Chen, Sin Liang Ou, Chia Ming Chang, Hau Chung Kuo, Der-Yuh Lin

研究成果: Conference contribution

摘要

The crystal quality improvement of a-plane GaN grown on r-plane sapphire was demonstrated by applying thermal annealing on as-grown samples in nitrogen ambient. The root mean square roughness of the 1000 °C-annealed a-plane GaN was only 0.4 nm measured by atomic force microscopy. Transmission electron microscopy results further indicate threading dislocations were decreased from 5×1010 cm-2 to 1.5×1010 cm-2 along [0001]GaN and stacking faults were decreased from 8.7× 105 cm-1 to 4.8× 105 cm-1 after the sample was annealed at 1000 °C. Room temperature photo luminescence measurements showed band edge emission intensity was enhanced up to 2.6 folds compared to the regular a-plane GaN film. Furthermore, corresponding cathode luminescence images reveal larger emission area for a-plane GaN with annealing than those without annealing, which was attributed to reduction of the nonradiative recombination centers. A series of experiments confirm this annealing process could be useful for further applications of GaN-based optoelectric devices.

原文English
主出版物標題2014 IEEE International Nanoelectronics Conference, INEC 2014
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479950379
DOIs
出版狀態Published - 2016 四月 26
事件IEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan
持續時間: 2014 七月 282014 七月 31

出版系列

名字2014 IEEE International Nanoelectronics Conference, INEC 2014

Other

OtherIEEE International Nanoelectronics Conference, INEC 2014
國家Japan
城市Sapporo
期間14-07-2814-07-31

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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