Effect of P-type last barrier on efficiency droop of blue InGaN light-emitting diodes

Yen Kuang Kuo, Miao Chan Tsai, Sheng Horng Yen, Ta Cheng Hsu, Yu Jiun Shen

研究成果: Article

94 引文 斯高帕斯(Scopus)

摘要

P-type doping in the last barrier is proposed to improve the efficiency droop of the blue InGaN light-emitting diodes (LEDs). The lightcurrent curves, energy band diagrams, carrier concentrations, radiative recombination efficiency, and internal quantum efficiency of the blue LEDs under study are investigated. The simulation results show that the efficiency droop is significantly improved when the last undoped GaN barrier in a typical blue LED is replaced by a p-type GaN barrier. The simulation results suggest that the improvement in efficiency droop is mainly due to the decrease of electron current leakage and increase of hole injection efficiency.

原文English
文章編號31
頁(從 - 到)1214-1220
頁數7
期刊IEEE Journal of Quantum Electronics
46
發行號8
DOIs
出版狀態Published - 2010 五月 3

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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