Effect of controlled growth dynamics on the microstructure of nonpolar a-plane GaN revealed by X-ray diffraction

Qian Sun, Tsung Shine Ko, Christopher D. Yerino, Yu Zhang, In Hwan Lee, Jung Han, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

研究成果: Article

37 引文 斯高帕斯(Scopus)

摘要

This paper reports the effect of controlled growth dynamics, as monitored by in situ optical reflectance, on the microstructure of nonpolar aplane GaN films grown on r-plane sapphire. The mosaic microstructure of a-plane GaN and its anisotropy are evaluated by X-ray rocking curve (XRC) measurements. By inserting a pronounced islanding stage followed by an enhanced lateral growth, pit-free a-plane GaN has been achieved showing an XRC linewidth of -0:18 and -0:3° for on- and off-axes planes, respectively, with only minor anisotropy. The density of basal-plane stacking faults is reduced by -70% as determined by a modified Williamson-Hall X-ray analysis.

原文English
文章編號071002
期刊Japanese Journal of Applied Physics
48
發行號7 PART 1
DOIs
出版狀態Published - 2009 七月 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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