Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes

Yen Kuang Kuo, Fang Ming Chen, Jih Yuan Chang, Man Fang Huang, Bo Ting Liou, Ya Hsuan Shih

研究成果: Article

摘要

Optical and electrical performance and the relevant physical properties of deep ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) are numerically investigated. The influence of bulk AlGaN electron-blocking layer (EBL) with various Al compositions and Mg-doping concentrations on the output performance of DUV LEDs is systemically explored. Simulation results show that the DUV LED with bulk Al0.85Ga0.15N EBL with a relatively low Mg-doping concentration of 2× 1019 cm-3 may have high wall-plug efficiency. The LED structure with Al0.55Ga0.45N/Al0.75Ga0.25N superlattice (SL) EBL is proposed in this study, which is shown to have high wall-plug efficiency similar to the LED with bulk Al0.85Ga0.15N EBL while the Al composition of AlGaN EBL can be effectively reduced. The proposed LED structure with SL EBL provides a practical way to fabricate high-crystalline-quality and high-efficiency DUV LEDs.

原文English
文章編號8922638
期刊IEEE Journal of Quantum Electronics
56
發行號1
DOIs
出版狀態Published - 2020 二月

    指紋

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此