Delta-doped quantum well structures grown by molecular beam epitaxy

D. G. Liu, C. P. Lee, K. H. Chang, Jenq-Shinn Wu, D. C. Liou

研究成果: Article同行評審

39 引文 斯高帕斯(Scopus)

摘要

Delta doping in quantum well structures has been studied. The quantum wells consist of a strained InGaAs layer sandwiched between two GaAs layers. The layers were undoped except for a sheet of Si dopants deposited in the middle of the quantum well. Structures with various doses and quantum well thicknesses were studied and compared. Capacitance voltage measurements were carried out to determine the carrier distribution. A very narrow carrier profile with a full width at half maximum of only 12 Å has been achieved. This is the narrowest carrier profile ever reported for any growth technique.

原文English
頁(從 - 到)1887-1888
頁數2
期刊Applied Physics Letters
57
發行號18
DOIs
出版狀態Published - 1990 十二月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

指紋 深入研究「Delta-doped quantum well structures grown by molecular beam epitaxy」主題。共同形成了獨特的指紋。

引用此