Defects, stress and abnormal shift of the (0 0 2) diffraction peak for Li-doped ZnO films

Yow-Jon Lin; Mu Shan Wang; Chia-Jyi Liu; Hsueh Jung Huang

doi:10.1016/j.apsusc.2010.06.016

Defects, stress and abnormal shift of the (0 0 2) diffraction peak for Li-doped ZnO films

Yow-Jon Lin, Mu Shan Wang, Chia-Jyi Liu, Hsueh Jung Huang

研究成果: Article

38 引文斯高帕斯（Scopus）

摘要

The effect of changes in Li content on the structural property of sol-gel Li-doped ZnO films was investigated in this study. The observed changes of the Li incorporation-induced strain along c-axis are closely related to the different ratios between the concentrations of Li interstitials (Li _i ) and Li substituting for Zn (Li _Zn ) in the films. According to the observed results from X-ray diffraction (XRD) and photoluminescence measurements, we found that the domination of the dissociative mechanism in the Li-doped ZnO films led to transformation from Li _Zn to Li _i , involving the formation of Zn vacancies (V _Zn ). In addition, the interaction between these defects (that is, Li _Zn , Li _i , V _Zn and oxygen vacancy) and the crystal structure may lead to the abnormal shift of the (0 0 2) diffraction peak position determined from XRD measurements.

原文	English
頁（從 - 到）	7623-7627
頁數	5
期刊	Applied Surface Science
卷	256
發行號	24
DOIs	https://doi.org/10.1016/j.apsusc.2010.06.016
出版狀態	Published - 2010 十月 1

All Science Journal Classification (ASJC) codes

Surfaces, Coatings and Films

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10.1016/j.apsusc.2010.06.016

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Lin, Y-J., Wang, M. S., Liu, C-J., & Huang, H. J. (2010). Defects, stress and abnormal shift of the (0 0 2) diffraction peak for Li-doped ZnO films. Applied Surface Science, 256(24), 7623-7627. https://doi.org/10.1016/j.apsusc.2010.06.016

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abstract = " The effect of changes in Li content on the structural property of sol-gel Li-doped ZnO films was investigated in this study. The observed changes of the Li incorporation-induced strain along c-axis are closely related to the different ratios between the concentrations of Li interstitials (Li i ) and Li substituting for Zn (Li Zn ) in the films. According to the observed results from X-ray diffraction (XRD) and photoluminescence measurements, we found that the domination of the dissociative mechanism in the Li-doped ZnO films led to transformation from Li Zn to Li i , involving the formation of Zn vacancies (V Zn ). In addition, the interaction between these defects (that is, Li Zn , Li i , V Zn and oxygen vacancy) and the crystal structure may lead to the abnormal shift of the (0 0 2) diffraction peak position determined from XRD measurements.",

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