Current-voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination

Chia Lung Tsai, Cheng Lung Tsai, Guan Ru He, Ting Hong Su, Chang Feng You, Yow Jon Lin

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this study, the current-voltage characteristics of the AlCdO/unpolished p-type Si and AlCdO/polished p-type Si Schottky diodes with and without light illumination were examined. It is found that the Schottky barrier height (the series resistance) of the AlCdO/unpolished p-type Si Schottky diode is higher (lower) than that of the AlCdO/polished p-type Si Schottky diode. The power conversion efficiency of the AlCdO/p-type Si devices in the light (AM 1.5 G, 100 mW/cm2) was improved by increasing built-in potential at the AlCdO/p-type Si interfaces and reducing the device series resistance and surface reflectivity. It is shown that the device surface roughness plays an essential role in improving the device performance.

原文English
頁(從 - 到)116-120
頁數5
期刊Solid-State Electronics
61
發行號1
DOIs
出版狀態Published - 2011 七月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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