Current-voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination

Chia Lung Tsai; Cheng Lung Tsai; Guan Ru He; Ting Hong Su; Chang Feng You; Yow Jon Lin

doi:10.1016/j.sse.2011.03.010

Current-voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination

Chia Lung Tsai, Cheng Lung Tsai, Guan Ru He, Ting Hong Su, Chang Feng You, Yow Jon Lin

光電科技研究所

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

In this study, the current-voltage characteristics of the AlCdO/unpolished p-type Si and AlCdO/polished p-type Si Schottky diodes with and without light illumination were examined. It is found that the Schottky barrier height (the series resistance) of the AlCdO/unpolished p-type Si Schottky diode is higher (lower) than that of the AlCdO/polished p-type Si Schottky diode. The power conversion efficiency of the AlCdO/p-type Si devices in the light (AM 1.5 G, 100 mW/cm²) was improved by increasing built-in potential at the AlCdO/p-type Si interfaces and reducing the device series resistance and surface reflectivity. It is shown that the device surface roughness plays an essential role in improving the device performance.

原文	English
頁（從 - 到）	116-120
頁數	5
期刊	Solid-State Electronics
卷	61
發行號	1
DOIs	https://doi.org/10.1016/j.sse.2011.03.010
出版狀態	Published - 2011 七月 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2011.03.010

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引用此

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abstract = "In this study, the current-voltage characteristics of the AlCdO/unpolished p-type Si and AlCdO/polished p-type Si Schottky diodes with and without light illumination were examined. It is found that the Schottky barrier height (the series resistance) of the AlCdO/unpolished p-type Si Schottky diode is higher (lower) than that of the AlCdO/polished p-type Si Schottky diode. The power conversion efficiency of the AlCdO/p-type Si devices in the light (AM 1.5 G, 100 mW/cm2) was improved by increasing built-in potential at the AlCdO/p-type Si interfaces and reducing the device series resistance and surface reflectivity. It is shown that the device surface roughness plays an essential role in improving the device performance.",

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AU - Tsai, Chia Lung

AU - Tsai, Cheng Lung

AU - He, Guan Ru

AU - Su, Ting Hong

AU - You, Chang Feng

AU - Lin, Yow Jon

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N2 - In this study, the current-voltage characteristics of the AlCdO/unpolished p-type Si and AlCdO/polished p-type Si Schottky diodes with and without light illumination were examined. It is found that the Schottky barrier height (the series resistance) of the AlCdO/unpolished p-type Si Schottky diode is higher (lower) than that of the AlCdO/polished p-type Si Schottky diode. The power conversion efficiency of the AlCdO/p-type Si devices in the light (AM 1.5 G, 100 mW/cm2) was improved by increasing built-in potential at the AlCdO/p-type Si interfaces and reducing the device series resistance and surface reflectivity. It is shown that the device surface roughness plays an essential role in improving the device performance.

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