Current-induced switching of exchange bias in nano-scaled magnetic tunnel junctions with a synthetic antiferromagnetic pinned layer

C. T. Chao, C. Y. Kuo, Lance Horng, M. Tsunoda, M. Takahashi, Jong-Ching Wu

研究成果: Article

摘要

This report investigates the current-induced switching of exchange bias without an external magnetic field in nano-scaled magnetic tunnel junction (MTJ) cells. An MTJ stack film was patterned into an ellipse with dimensions of 120 nm × 270 nm by using standard electron beam lithography in combination with ion beam etching. A spin-polarized current pulse with a duration of 100 ns was used to switch the exchange bias direction of the synthetic antiferromagnetic (SAF) pinned layer. It is worth noting that the MTJ cell was initialized in a high resistance state before applying the current pulse. For the application of both positive and negative current pulses, the resistance can be switched from the high (antiparallel) state to the low (parallel) one at 2.95 and -2.80 mA, respectively. After the current-induced switching, it was found that the magnetoresistance curve is reversed relative to the one before the current-induced switching. Predominantly, this behavior is independent of the polarity of the current pulse. As a result, it is shown that the exchange bias in the SAF pinned layer changes its direction with a sufficient supply of current pulse.

原文English
文章編號07B103
期刊Journal of Applied Physics
111
發行號7
DOIs
出版狀態Published - 2012 四月 1

指紋

tunnel junctions
pulses
high resistance
ellipses
cells
polarity
lithography
ion beams
etching
electron beams
curves
magnetic fields

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

引用此文

@article{d16dfdbe273d4ebe9292d9397ab1a7f9,
title = "Current-induced switching of exchange bias in nano-scaled magnetic tunnel junctions with a synthetic antiferromagnetic pinned layer",
abstract = "This report investigates the current-induced switching of exchange bias without an external magnetic field in nano-scaled magnetic tunnel junction (MTJ) cells. An MTJ stack film was patterned into an ellipse with dimensions of 120 nm × 270 nm by using standard electron beam lithography in combination with ion beam etching. A spin-polarized current pulse with a duration of 100 ns was used to switch the exchange bias direction of the synthetic antiferromagnetic (SAF) pinned layer. It is worth noting that the MTJ cell was initialized in a high resistance state before applying the current pulse. For the application of both positive and negative current pulses, the resistance can be switched from the high (antiparallel) state to the low (parallel) one at 2.95 and -2.80 mA, respectively. After the current-induced switching, it was found that the magnetoresistance curve is reversed relative to the one before the current-induced switching. Predominantly, this behavior is independent of the polarity of the current pulse. As a result, it is shown that the exchange bias in the SAF pinned layer changes its direction with a sufficient supply of current pulse.",
author = "Chao, {C. T.} and Kuo, {C. Y.} and Lance Horng and M. Tsunoda and M. Takahashi and Jong-Ching Wu",
year = "2012",
month = "4",
day = "1",
doi = "10.1063/1.3673811",
language = "English",
volume = "111",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Current-induced switching of exchange bias in nano-scaled magnetic tunnel junctions with a synthetic antiferromagnetic pinned layer

AU - Chao, C. T.

AU - Kuo, C. Y.

AU - Horng, Lance

AU - Tsunoda, M.

AU - Takahashi, M.

AU - Wu, Jong-Ching

PY - 2012/4/1

Y1 - 2012/4/1

N2 - This report investigates the current-induced switching of exchange bias without an external magnetic field in nano-scaled magnetic tunnel junction (MTJ) cells. An MTJ stack film was patterned into an ellipse with dimensions of 120 nm × 270 nm by using standard electron beam lithography in combination with ion beam etching. A spin-polarized current pulse with a duration of 100 ns was used to switch the exchange bias direction of the synthetic antiferromagnetic (SAF) pinned layer. It is worth noting that the MTJ cell was initialized in a high resistance state before applying the current pulse. For the application of both positive and negative current pulses, the resistance can be switched from the high (antiparallel) state to the low (parallel) one at 2.95 and -2.80 mA, respectively. After the current-induced switching, it was found that the magnetoresistance curve is reversed relative to the one before the current-induced switching. Predominantly, this behavior is independent of the polarity of the current pulse. As a result, it is shown that the exchange bias in the SAF pinned layer changes its direction with a sufficient supply of current pulse.

AB - This report investigates the current-induced switching of exchange bias without an external magnetic field in nano-scaled magnetic tunnel junction (MTJ) cells. An MTJ stack film was patterned into an ellipse with dimensions of 120 nm × 270 nm by using standard electron beam lithography in combination with ion beam etching. A spin-polarized current pulse with a duration of 100 ns was used to switch the exchange bias direction of the synthetic antiferromagnetic (SAF) pinned layer. It is worth noting that the MTJ cell was initialized in a high resistance state before applying the current pulse. For the application of both positive and negative current pulses, the resistance can be switched from the high (antiparallel) state to the low (parallel) one at 2.95 and -2.80 mA, respectively. After the current-induced switching, it was found that the magnetoresistance curve is reversed relative to the one before the current-induced switching. Predominantly, this behavior is independent of the polarity of the current pulse. As a result, it is shown that the exchange bias in the SAF pinned layer changes its direction with a sufficient supply of current pulse.

UR - http://www.scopus.com/inward/record.url?scp=84861724307&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861724307&partnerID=8YFLogxK

U2 - 10.1063/1.3673811

DO - 10.1063/1.3673811

M3 - Article

AN - SCOPUS:84861724307

VL - 111

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 07B103

ER -