Cu(In,Ga)Se 2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se 2 quaternary alloy and in targets

Y. C. Lin, Z. Q. Lin, C. H. Shen, L. Q. Wang, C. T. Ha, Chris Peng

研究成果: Article

24 引文 斯高帕斯(Scopus)

摘要

This study reports the successful preparation of Cu(In,Ga)Se 2 (CIGS) thin film solar cells by magnetron sputtering with a chalcopyrite CIGS quaternary alloy target. Bi-layer Mo films were deposited onto soda lime glass. A CIGS quaternary alloy target was used in combination with a stack indium target for compensating the loss of indium during annealing process. A one-stage annealing process was performed to form CIGS chalcopyrite phase. Experimental results show that the optimal adhesion strength, residual stress, and resistivity were obtained at a thickness ratio of 67% of bi-layer Mo films and a working pressure of 0.13 Pa. The CIGS precursor was layered through selenization at 798 K for 20 min. The stoichiometry ratios of the CIGS film were Cu/(In + Ga) = 0.91 and Ga/(In + Ga) = 0.23, which approached the device-quality stoichiometry ratio (Cu/(In + Ga) <0.95, and Ga/(In + Ga) <0.3). The resistivity of the sample was 11.8 Ωcm, with a carrier concentration of 3.6 × 10 17 cm -3 and mobility of 1.45 cm 2V -1s -1. The resulting film exhibited p-type conductivity.

原文English
頁(從 - 到)493-500
頁數8
期刊Journal of Materials Science: Materials in Electronics
23
發行號2
DOIs
出版狀態Published - 2012 二月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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