Correlation of barrier material and quantum-well number for InGaN/(In)GaN blue light-emitting diodes

Jih-Yuan Chang, Yen-Kuang Kuo, Miao Chan Tsai

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Optical properties of the InGaN/(In)GaN light-emitting diodes (LEDs) with varied barrier materials and quantum-well (QW) numbers are studied numerically. The simulation results show that, for the LEDs with GaN barriers, the single quantum-well (SQW) structure has the best optical performance. However, for the LEDs with InGaN barriers, the 5-QW structure has less serious efficiency droop and higher output power at high current than the SQW one, which makes it a better structure for high-power LEDs. The physical mechanisms of the aforementioned phenomena can be well explained by uniformity of carrier distribution, band-filling effect, and overlap between the electron and hole wavefunctions.

原文English
頁(從 - 到)729-734
頁數6
期刊Physica Status Solidi (A) Applications and Materials Science
208
發行號3
DOIs
出版狀態Published - 2011 三月 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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