Correlation between the electron-phonon coupling and rectifying performance for poly(3-hexylthiophene)/n-type Si devices

Yow Jon Lin, Yi Min Chin

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

A correlation between the electron-phonon coupling and rectifying performance is identified for poly(3-hexylthiophene) (P3HT)/n-type Si devices and an analysis using the temperature-dependent Hall-effect characteristics is presented. The carrier mobility in the P3HT film exhibits strong temperature dependence, indicating the dominance of tunneling. However, the incorporation of titanium oxide (TiO2) nanoparticles into P3HT leads to the dominance of hopping. The results demonstrate that the incorporation of TiO2 nanoparticles into P3HT influences the electrical property of P3HT/n-type Si devices by the electron-phonon coupling modification and the increased spacing between molecules that serve to enhance the carrier mobility in P3HT.

原文English
文章編號173709
期刊Journal of Applied Physics
116
發行號17
DOIs
出版狀態Published - 2014 十一月 7

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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