Controllable remanent states on microstructured magnetic tunnel junction rings

C. C. Chen, C. T. Chao, C. Y. Kuo, Lance Horng, Teho Wu, G. Chern, C. Y. Huang, S. Isogami, M. Tsunoda, M. Takahashi, J. C. Wu

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2 引文 斯高帕斯(Scopus)


Controllable remanent states have been studied on the microstructured magnetic tunnel junction (MTJ) rings through magnetoresistance measurements. These rings were designed accordingly with an outer/inner diameter of 2/1 and 1/0.5/μm to reveal two and one metastable states, respectively, during the magnetization reversal process on the free layer. The distinct magnetoresistance levels based on the tunneling magnetoresistance effect are associated with the relative alignment of magnetization of free layer and pinned layer. As a result, four and three controllable remanent magnetic states on the free layer were manipulated by ramping external magnetic fields, applied in the biasing direction, with various field ranges, giving rise to four and three stable mangetoresistance values at zero field. These results may provide a great potential in magnetic multibit memory applications using ring-shaped cells.

頁(從 - 到)2824-2826
期刊IEEE Transactions on Magnetics
出版狀態Published - 2007 六月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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