Contactless electroreflectance study of strained Zn0.79Cd0.21Se/ZnSe double quantum wells

R. C. Tu, Y. K. Su, D. Y. Lin, C. F. Li, Y. S. Huang, W. H. Lan, S. L. Tu, S. J. Chang, S. C. Chou, W. C. Chou

研究成果: Article

14 引文 斯高帕斯(Scopus)

摘要

We have studied various excitonic transitions of strained Zn0.79Cd0.21Se/ZnSe double quantum wells, grown by molecular beam epitaxy on (100) GaAs substrates, using contactless dectroreflectance (CER) at 15 and 300 K. A number of intersub-band transitions in the CER spectra from the sample have been observed. An analysis of the CER spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light )-hole band state. The conduction-band offset Qc is used as on adjustable parameter to study the band offset in the strained Zn0.79Cd0.21Se/ZnSe system. The value of Qc is determined to be 0.67±0.03.

原文English
頁(從 - 到)1043-1048
頁數6
期刊Journal of Applied Physics
83
發行號2
DOIs
出版狀態Published - 1998 一月 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Tu, R. C., Su, Y. K., Lin, D. Y., Li, C. F., Huang, Y. S., Lan, W. H., Tu, S. L., Chang, S. J., Chou, S. C., & Chou, W. C. (1998). Contactless electroreflectance study of strained Zn0.79Cd0.21Se/ZnSe double quantum wells. Journal of Applied Physics, 83(2), 1043-1048. https://doi.org/10.1063/1.366795