Conduction behavior conversion for Cu-doped ZnS/n-type Si devices with different Cu contents

Wei Shih Ni, Yow Jon Lin

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

Currents through Cu-doped ZnS (ZnCuS)/n-type Si structures were studied. The electrical conduction investigations suggest that the carrier transport behavior is governed by the Poole–Frenkel emission for ZnCuS/n-type Si devices having the low Cu concentration. However, the carrier transport behavior is governed by the thermionic emission for ZnCuS/n-type Si devices having the high Cu concentration. The photoluminescence result revealed that sulfur vacancy (VS) is the origin of conduction behavior conversion. It is shown that the increased Cu concentration leads to the reduced formation probability of VS. The dependence of VS on the film composition was identified for providing a guide to control the current transport behavior of ZnCuS/n-type Si devices.

原文English
頁(從 - 到)1127-1132
頁數6
期刊Applied Physics A: Materials Science and Processing
119
發行號3
DOIs
出版狀態Published - 2015 六月 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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