Comment on "influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts" [ Appl. Phys. Lett. 89, 033503 (2006)]

Yow Jon Lin; Chia Lung Tsai; Day Shan Liu

doi:10.1063/1.2435354

Comment on "influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts" [ Appl. Phys. Lett. 89, 033503 (2006)]

Yow Jon Lin, Chia Lung Tsai, Day Shan Liu

光電科技研究所

研究成果: Comment/debate › 同行評審

1 引文斯高帕斯（Scopus）

原文	English
文章編號	046101
期刊	Applied Physics Letters
卷	90
發行號	4
DOIs	https://doi.org/10.1063/1.2435354
出版狀態	Published - 2007 二月 5

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

存取文件

10.1063/1.2435354

引用此

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