Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition

T. S. Ko, T. C. Wang, H. M. Huang, J. R. Chen, H. G. Chen, C. P. Chu, T. C. Lu, H. C. Kuo, S. C. Wang

研究成果: Article

15 引文 斯高帕斯(Scopus)

指紋 深入研究「Characteristics of a-plane GaN with the SiN<sub>x</sub> insertion layer grown by metal-organic chemical vapor deposition」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy