Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition

T. S. Ko, T. C. Wang, H. M. Huang, J. R. Chen, H. G. Chen, C. P. Chu, T. C. Lu, H. C. Kuo, S. C. Wang

研究成果: Article

15 引文 斯高帕斯(Scopus)

摘要

We utilized in-situ-grown SiNx insertion layers to mitigate part of dislocations stretching in nonpolar a-plane GaN films using metal-organic chemical vapor deposition. Both X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements revealed that better crystal quality and smoother surface could be obtained when the in-situ SiNx layer was inserted closer to the r-plane sapphire substrate and indicated that the in-situ SiNx insertion layer could suppress dislocations caused by lattice mismatch between the sapphire and epitaxial layers. In addition, photoluminescence and cathodoluminescence measurements confirmed the effect of the in-situ SiNx insertion layer on the optical properties of the improved a-plane GaN thin film, which is consistent with the XRD and AFM analyses and suggested reduction in the density of nonradiative centers.

原文English
頁(從 - 到)4972-4975
頁數4
期刊Journal of Crystal Growth
310
發行號23
DOIs
出版狀態Published - 2008 十一月 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Ko, T. S., Wang, T. C., Huang, H. M., Chen, J. R., Chen, H. G., Chu, C. P., Lu, T. C., Kuo, H. C., & Wang, S. C. (2008). Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition. Journal of Crystal Growth, 310(23), 4972-4975. https://doi.org/10.1016/j.jcrysgro.2008.07.058