Changes in activation energies of donors and carrier concentration in Si-doped n-type GaN due to (NH4)2Sx treatment

Yow-Jon Lin, Ching Ting Lee, Hsing Cheng Chang

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

In this study, changes in the activation energy of donors and carrier concentration in n-type GaN (n-GaN) samples, due to (NH4) 2Sx treatment, were investigated. We find that the activation energy of Si in the n-GaN samples without or with (NH 4)2Sx treatment was determined to be 21 meV and a donor level was also present in (NH4)2S x-treated n-GaN near the surface with an activation energy of 59 meV which is associated with sulfur donors substituting for nitrogen. By rearranging the well-known equations for the conductivity and mobility in two-layer systems, we find that the electron concentration within the thin sulfur-passivated layer in n-GaN near the surface at room temperature increased from its original value 6.9 × 1017 cm-3 to 9.7 × 1019 cm-3, resulting in the occurrence of the Burstein-Moss shift for optical band-gap observation.

原文English
文章編號031
頁(從 - 到)1167-1171
頁數5
期刊Semiconductor Science and Technology
21
發行號8
DOIs
出版狀態Published - 2006 八月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

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