Carrier transportation and internal quantum efficiency of blue inGaN light-emitting diodes with P-Doped Barriers

Miao Chan Tsai, Sheng Horng Yen, Yen-Kuang Kuo

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

In this letter, the situation when the barriers are partially p-doped in selected regions is considered in order to avoid the diffusion of Mg into the quantum well during crystal growth. Moreover, to increase the hole injection and improve the carrier distribution across the multiple quantum wells, the three barriers near the p-layers are p-doped with a gradually increased doping concentration in a blue InGaN light-emitting diode. According to the simulation results, when the stepwise p-doping profile is used in the selected barrier regions, the output power and internal quantum efficiency markedly improve due to the increased hole injection efficiency and decreased electron leakage.

原文English
文章編號5378628
頁(從 - 到)374-376
頁數3
期刊IEEE Photonics Technology Letters
22
發行號6
DOIs
出版狀態Published - 2010 三月 15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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