Carrier transport and photoresponse for heterojunction diodes based on the reduced graphene oxide-based TiO2 composite and p-type Si

Yow-Jon Lin, Shih Hung Yang

研究成果: Article

3 引文 (Scopus)

摘要

The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on p-type Si and the reduced graphene oxide-based TiO2 (TiO2:RGO) composite. The enhanced dark conductivity was observed for TiO2:RGO composite films. The improved electrical conductivity is considered to mainly come from the mobility enhancement. The TiO2/p-type Si diode shows a poor rectifying behavior and low photoresponse. This is because of the dominance of electron traps in TiO2. However, the TiO2:RGO/p-type Si diode shows a good rectifying behavior and high photoresponse, which is attributed to high-mobility electron transport combined with the reduced number of electron traps.

原文English
頁(從 - 到)91-95
頁數5
期刊Applied Physics A: Materials Science and Processing
116
發行號1
DOIs
出版狀態Published - 2014 一月 1

指紋

Graphite
Carrier transport
Oxides
Graphene
Heterojunctions
Electron traps
Diodes
Composite materials
Composite films
Electric properties
Fabrication

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

引用此文

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