Behavior of the first layer growth in GaAs molecular beam epitaxy

D. G. Liu, C. P. Lee, K. H. Chang, Jenq-Shinn Wu, D. C. Liou

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high-energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting surface condition and is different from the time needed for a single layer growth. Periodic flux interruption has been used to study the surface recovery behavior as a function of growth time. When the growth time is the same as the time for a single layer growth, sustained two-dimensional growth can be obtained.

原文English
頁(從 - 到)1392-1394
頁數3
期刊Applied Physics Letters
57
發行號14
DOIs
出版狀態Published - 1990 十二月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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