Band gap engineering of chemical vapor deposited graphene by in situ BN doping

Cheng Kai Chang, Satender Kataria, Chun Chiang Kuo, Abhijit Ganguly, Bo Yao Wang, Jeong Yuan Hwang, Kay Jay Huang, Wei Hsun Yang, Sheng Bo Wang, Cheng Hao Chuang, Mi Chen, Ching I. Huang, Way Faung Pong, Ker Jar Song, Shoou Jinn Chang, Jing Hua Guo, Yian Tai, Masahiko Tsujimoto, Seiji Isoda, Chun Wei ChenLi Chyong Chen, Kuei Hsien Chen

研究成果: Article同行評審

190 引文 斯高帕斯(Scopus)


Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV-vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π-π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.

頁(從 - 到)1333-1341
期刊ACS Nano
出版狀態Published - 2013 二月 26

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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