Band-gap bowing parameter of the InxGa1-xN derived from theoretical simulation

Yen-Kuang Kuo, W. W. Lin, J. Lin

研究成果: Article

21 引文 斯高帕斯(Scopus)

摘要

The band-gap energy and band-gap bowing parameter of the wurtzite InGaN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter for the wurtzite InGaN alloys is b = 1.21 ± 0.03 eV. The simulation results also show that the width of the InxGa1-xN top valence band at the Γ point decreases when the indium composition increases and has a value of 7.331 eV for the GaN (x = 0) and 6.972 eV for the In0.375Ga0.625N (x = 0.375).

原文English
頁(從 - 到)3157-3158
頁數2
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
發行號5 A
出版狀態Published - 2001 五月 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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