The band-gap energy and band-gap bowing parameter of the wurtzite InGaN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter for the wurtzite InGaN alloys is b = 1.21 ± 0.03 eV. The simulation results also show that the width of the InxGa1-xN top valence band at the Γ point decreases when the indium composition increases and has a value of 7.331 eV for the GaN (x = 0) and 6.972 eV for the In0.375Ga0.625N (x = 0.375).
|頁（從 - 到）||3157-3158|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 2001 五月 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)