Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier

Chun Yi Chai, Jung A. Huang, Yong Lin Lai, Janne Wha Wu, Chun Yen Chang, Yi Jen Chan, Huang Chung Cheng

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

The influences of the As-outdiffusion and Au-indiffusion on the performances of the Au/Ge/Pd/n-GaAs ohmic metallization systems are clarified by investigating three different types of barrier metal structures Au/Ge/Pd/GaAs, Au/Ti/Ge/Pd/GaAs, and Au/Mo/Ti/Ge/Pd/GaAs. The results indicate that As-outdiffusion leads to higher specific contact resistivity, whereas Au-indiffusion contributes to the turnaround of the contact resistivity at even higher annealing temperature. For Au/Mo/Ti/Ge/Pd/n-GaAs samples, they exhibit the smoothest surface and the lowest specific contact resistivity with the widest available annealing temperature range. Moreover, Auger electron spectroscopy depth profiles show that the existing Ti oxide for the Mo/Ti bilayer can very effectively retard Au-indiffusion, reflecting the onset of the turnaround point at much higher annealing temperature.

原文English
頁(從 - 到)1818-1822
頁數5
期刊Journal of Electronic Materials
25
發行號12
DOIs
出版狀態Published - 1996 十二月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Chai, C. Y., Huang, J. A., Lai, Y. L., Wu, J. W., Chang, C. Y., Chan, Y. J., & Cheng, H. C. (1996). Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier. Journal of Electronic Materials, 25(12), 1818-1822. https://doi.org/10.1007/BF02657159