Application of the thermionic field emission model in the study of a Schottky barrier of Ni on p-GaN from current-voltage measurements

研究成果: Article

55 引文 (Scopus)

摘要

Barrier height values of Ni contacts to Mg-doped p -type GaN (p-GaN) were obtained from current-voltage measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission. It also resulted in an increase in current flow under forward bias condition, which was not analyzed using the thermionic emission model. Further, the calculated barrier height value of Ni contacts to p-GaN using the thermionic field emission model is in good agreement with the value of 1.9 eV obtained from x-ray photoelectron spectroscopy measurements.

原文English
文章編號122109
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
86
發行號12
DOIs
出版狀態Published - 2005 三月 21

指紋

thermionic emission
electrical measurement
field emission
electric contacts
x ray spectroscopy
depletion
photoelectron spectroscopy
defects

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此文

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abstract = "Barrier height values of Ni contacts to Mg-doped p -type GaN (p-GaN) were obtained from current-voltage measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission. It also resulted in an increase in current flow under forward bias condition, which was not analyzed using the thermionic emission model. Further, the calculated barrier height value of Ni contacts to p-GaN using the thermionic field emission model is in good agreement with the value of 1.9 eV obtained from x-ray photoelectron spectroscopy measurements.",
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N2 - Barrier height values of Ni contacts to Mg-doped p -type GaN (p-GaN) were obtained from current-voltage measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission. It also resulted in an increase in current flow under forward bias condition, which was not analyzed using the thermionic emission model. Further, the calculated barrier height value of Ni contacts to p-GaN using the thermionic field emission model is in good agreement with the value of 1.9 eV obtained from x-ray photoelectron spectroscopy measurements.

AB - Barrier height values of Ni contacts to Mg-doped p -type GaN (p-GaN) were obtained from current-voltage measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission. It also resulted in an increase in current flow under forward bias condition, which was not analyzed using the thermionic emission model. Further, the calculated barrier height value of Ni contacts to p-GaN using the thermionic field emission model is in good agreement with the value of 1.9 eV obtained from x-ray photoelectron spectroscopy measurements.

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