AlGaN/GaN multiple quantum wells grown by atomic-layer deposition

M. H. Lo, Z. Y. Li, J. R. Chen, T. S. Ko, T. C. Lu, H. C. Kuo, S. C. Wang

研究成果: Conference contribution

摘要

A three-pair AlGaN/GaN multiple quantum well (MQW) structure with superlattices (SLs) was grown on c-plane sapphire using metal organic chemical vapor deposition (MOCVD) system. The AlGaN barrier and GaN well of the MQW structure were grown by atomic layer deposition (ALD) and conventional growth, respectively. The HRTEM and HRXRD results show the grown structure has shape interface between SLs layers and QWs with good periodicity. The AFM and SEM data show smooth surface morphology with low RMS value and low defect density. The CL measurements also indicate uniform luminescence pattern at room temperature. The AlGaN/GaN MQW with AlN/GaN SLs structure grown by ALD could be used to improve the surface morphology by effectively suppress the threading dislocation.

原文English
主出版物標題Gallium Nitride Materials and Devices III
DOIs
出版狀態Published - 2008 四月 23
事件Society of Photo-Optical Instrumentation Engineers (SPIE) - San Jose, CA, United States
持續時間: 2008 一月 212008 一月 24

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
6894
ISSN(列印)0277-786X

Other

OtherSociety of Photo-Optical Instrumentation Engineers (SPIE)
國家United States
城市San Jose, CA
期間08-01-2108-01-24

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

指紋 深入研究「AlGaN/GaN multiple quantum wells grown by atomic-layer deposition」主題。共同形成了獨特的指紋。

  • 引用此

    Lo, M. H., Li, Z. Y., Chen, J. R., Ko, T. S., Lu, T. C., Kuo, H. C., & Wang, S. C. (2008). AlGaN/GaN multiple quantum wells grown by atomic-layer deposition. 於 Gallium Nitride Materials and Devices III [68941V] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 6894). https://doi.org/10.1117/12.762158