AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

R. H. Horng, D. S. Wuu, S. C. Wei, Man-Fang Huang, K. H. Chang, P. H. Liu, K. C. Lin

研究成果: Article

19 引文 斯高帕斯(Scopus)

摘要

The fabrication of an AlGaInP/AuBe/glass light emitting diode (LED) by a wafer bonding technique is presented. It was grown by metalorganic vapor phase epitaxy on a temporary GaAs substrate. This wafer-bonded device has a luminance of 3050 cd/m2 at an operating current of 20 mA. With an absorbing GaAs substrate, it is about three times brighter than a conventional device.

原文English
頁(從 - 到)154-156
頁數3
期刊Applied Physics Letters
75
發行號2
DOIs
出版狀態Published - 1999 七月 12

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

指紋 深入研究「AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology」主題。共同形成了獨特的指紋。

  • 引用此

    Horng, R. H., Wuu, D. S., Wei, S. C., Huang, M-F., Chang, K. H., Liu, P. H., & Lin, K. C. (1999). AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology. Applied Physics Letters, 75(2), 154-156. https://doi.org/10.1063/1.124303