AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding

R. H. Horng, D. S. Wuu, S. C. Wei, C. Y. Tseng, M. F. Huang, K. H. Chang, P. H. Liu, K. C. Lin

研究成果: Article

43 引文 斯高帕斯(Scopus)

摘要

An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate has been fabricated using wafer bonding. The bonded mirror-substrate LED is capable of emitting luminous intensity of 90 and 205 mcd under 20 and 50 mA injection, respectively. The emission wavelength was found to be independent of the injection current. This feature is attributed to the Si substrate providing a good heat sink.

原文English
頁(從 - 到)3054-3056
頁數3
期刊Applied Physics Letters
75
發行號20
DOIs
出版狀態Published - 1999 十一月 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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  • 引用此

    Horng, R. H., Wuu, D. S., Wei, S. C., Tseng, C. Y., Huang, M. F., Chang, K. H., Liu, P. H., & Lin, K. C. (1999). AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding. Applied Physics Letters, 75(20), 3054-3056. https://doi.org/10.1063/1.125228