Advantages of InGaN solar cells with p-doped and high-al-content superlattice AlGaN barriers

Yen-Kuang Kuo, Yi An Chang, Han Wei Lin, Jih-Yuan Chang, Shih Hsun Yen, Fang Ming Chen, Yu Han Chen

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this letter, the photovoltaic characteristics of InGaN/AlGaN superlattice solar cells with In=21% and 40% in InGaN multiple quantum wells, and Al=14% and 20% in AlGaN barriers are investigated. The results obtained numerically show that an increment of 18.2% in short-circuit current density is achieved by introducing p-type doped (hole concentration=3 × 10 17cm-3) Al0.2Ga0.8N barriers in In0.4Ga0.6N superlattice solar cell when compared with undoped Al0.14Ga0.86N barriers. This improvement is mainly attributed to the increased electric field in the main absorption region, which is beneficial for the holes in the valence band to move towards the p-region. The capability of carrier transport is efficiently improved, thus increasing the carrier-collection efficiency and the conversion efficiency.

原文English
文章編號6389786
頁(從 - 到)85-87
頁數3
期刊IEEE Photonics Technology Letters
25
發行號1
DOIs
出版狀態Published - 2013 一月 2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

指紋 深入研究「Advantages of InGaN solar cells with p-doped and high-al-content superlattice AlGaN barriers」主題。共同形成了獨特的指紋。

引用此