Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers

Yen Kuang Kuo, Tsun Hsin Wang, Jih Yuan Chang, Miao Chan Tsai

研究成果: Article同行評審

54 引文 斯高帕斯(Scopus)

摘要

The advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers are studied. The energy band diagrams, carrier concentrations in the quantum wells, radiative recombination rate in the active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results show that the InGaN/GaN-InGaN-GaN light-emitting diode has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams which are favorable for the injection of electrons and holes and uniform distribution of these carriers in the quantum wells.

原文English
文章編號091107
期刊Applied Physics Letters
99
發行號9
DOIs
出版狀態Published - 2011 八月 29

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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