Advantages of blue InGaN light-emitting diodes with composition-graded barriers and electron-blocking layer

研究成果: Article

11 引文 (Scopus)

摘要

Blue InGaN light-emitting diodes (LEDs) with composition-graded barriers and composition-garded electron-blocking layer (EBL) are studied theoretically. Simulation results show that the employment of composition-graded barriers and compositon-graded EBL simultaneously can benefit from the enhanced hole-injection efficiency and more uniform carrier distribution among the quantum wells. Moreover, the optical and electrical properties of the InGaN blue LEDs are markedly promoted. The graded barriers are investigated systematically in an attempt to obtain the optimal situation.

原文English
頁(從 - 到)1103-1106
頁數4
期刊Physica Status Solidi (A) Applications and Materials Science
210
發行號6
DOIs
出版狀態Published - 2013 六月 1

指紋

Light emitting diodes
light emitting diodes
Electrons
Chemical analysis
electrons
Semiconductor quantum wells
Electric properties
Optical properties
electrical properties
quantum wells
injection
optical properties
simulation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

引用此文

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AU - Kuo, Yen-Kuang

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AB - Blue InGaN light-emitting diodes (LEDs) with composition-graded barriers and composition-garded electron-blocking layer (EBL) are studied theoretically. Simulation results show that the employment of composition-graded barriers and compositon-graded EBL simultaneously can benefit from the enhanced hole-injection efficiency and more uniform carrier distribution among the quantum wells. Moreover, the optical and electrical properties of the InGaN blue LEDs are markedly promoted. The graded barriers are investigated systematically in an attempt to obtain the optimal situation.

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