Adjustment of demagnetizing field in permalloy nanowires to control domain wall motion

Kuei Chang Hu; Hong Yo Lu; Chia Chi Chang; Hao Hsuan Chen; Feng Sheng Wu; Chao Hsien Huang; Tian Chiuan Wu; L. Lin; Jong Ching Wu; Lance Horng

doi:10.1109/TMAG.2013.2273571

Adjustment of demagnetizing field in permalloy nanowires to control domain wall motion

Kuei Chang Hu, Hong Yo Lu, Chia Chi Chang, Hao Hsuan Chen, Feng Sheng Wu, Chao Hsien Huang, Tian Chiuan Wu, L. Lin, Jong Ching Wu, Lance Horng

物理學系

研究成果: Article

2 引文斯高帕斯（Scopus）

摘要

The domain wall motion in permalloy nanowires has been investigated widely due to its potential for a new type of memory. In this paper. we use the LLG Simulator based on the Landau-Lifshitz-Gilbert (LLG) equation to investigate the field-driven domain-wall motion in a long, straight ferromagnetic strip. An injection field of 60 Oe is applied to inject a domain wall from an extended disk into the nanowire. We found a dependence of nanowire dimensions with the velocity of domain wall. By increasing the width of the nanowire, the velocity of the domain wall motion also increases, while theWalker breakdown field (H_WB) decreases. On the other hand, increasing the thicknesses of the nanowire, the domain wall velocity, H_WB, and demagnetizing field all decrease. By applying a vertical field from 0 to 1000 Oe in order to enhance the demagnetizing field, it is found the H_WB is increased from 16 to 20 Oe.

原文	English
文章編號	2273571
期刊	IEEE Transactions on Magnetics
卷	50
發行號	1
DOIs	https://doi.org/10.1109/TMAG.2013.2273571
出版狀態	Published - 2014 一月

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

存取文件

10.1109/TMAG.2013.2273571

指紋深入研究「Adjustment of demagnetizing field in permalloy nanowires to control domain wall motion」主題。共同形成了獨特的指紋。

引用此

Hu, K. C., Lu, H. Y., Chang, C. C., Chen, H. H., Wu, F. S., Huang, C. H., Wu, T. C., Lin, L., Wu, J. C., & Horng, L. (2014). Adjustment of demagnetizing field in permalloy nanowires to control domain wall motion. IEEE Transactions on Magnetics, 50(1), [2273571]. https://doi.org/10.1109/TMAG.2013.2273571

@article{73458873abd64b9795cf4828cfbef649,

title = "Adjustment of demagnetizing field in permalloy nanowires to control domain wall motion",

abstract = "The domain wall motion in permalloy nanowires has been investigated widely due to its potential for a new type of memory. In this paper. we use the LLG Simulator based on the Landau-Lifshitz-Gilbert (LLG) equation to investigate the field-driven domain-wall motion in a long, straight ferromagnetic strip. An injection field of 60 Oe is applied to inject a domain wall from an extended disk into the nanowire. We found a dependence of nanowire dimensions with the velocity of domain wall. By increasing the width of the nanowire, the velocity of the domain wall motion also increases, while theWalker breakdown field (HWB) decreases. On the other hand, increasing the thicknesses of the nanowire, the domain wall velocity, HWB, and demagnetizing field all decrease. By applying a vertical field from 0 to 1000 Oe in order to enhance the demagnetizing field, it is found the HWB is increased from 16 to 20 Oe.",

author = "Hu, {Kuei Chang} and Lu, {Hong Yo} and Chang, {Chia Chi} and Chen, {Hao Hsuan} and Wu, {Feng Sheng} and Huang, {Chao Hsien} and Wu, {Tian Chiuan} and L. Lin and Wu, {Jong Ching} and Lance Horng",

year = "2014",

month = jan,

doi = "10.1109/TMAG.2013.2273571",

language = "English",

volume = "50",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Adjustment of demagnetizing field in permalloy nanowires to control domain wall motion

AU - Hu, Kuei Chang

AU - Lu, Hong Yo

AU - Chang, Chia Chi

AU - Chen, Hao Hsuan

AU - Wu, Feng Sheng

AU - Huang, Chao Hsien

AU - Wu, Tian Chiuan

AU - Lin, L.

AU - Wu, Jong Ching

AU - Horng, Lance

PY - 2014/1

Y1 - 2014/1

N2 - The domain wall motion in permalloy nanowires has been investigated widely due to its potential for a new type of memory. In this paper. we use the LLG Simulator based on the Landau-Lifshitz-Gilbert (LLG) equation to investigate the field-driven domain-wall motion in a long, straight ferromagnetic strip. An injection field of 60 Oe is applied to inject a domain wall from an extended disk into the nanowire. We found a dependence of nanowire dimensions with the velocity of domain wall. By increasing the width of the nanowire, the velocity of the domain wall motion also increases, while theWalker breakdown field (HWB) decreases. On the other hand, increasing the thicknesses of the nanowire, the domain wall velocity, HWB, and demagnetizing field all decrease. By applying a vertical field from 0 to 1000 Oe in order to enhance the demagnetizing field, it is found the HWB is increased from 16 to 20 Oe.

AB - The domain wall motion in permalloy nanowires has been investigated widely due to its potential for a new type of memory. In this paper. we use the LLG Simulator based on the Landau-Lifshitz-Gilbert (LLG) equation to investigate the field-driven domain-wall motion in a long, straight ferromagnetic strip. An injection field of 60 Oe is applied to inject a domain wall from an extended disk into the nanowire. We found a dependence of nanowire dimensions with the velocity of domain wall. By increasing the width of the nanowire, the velocity of the domain wall motion also increases, while theWalker breakdown field (HWB) decreases. On the other hand, increasing the thicknesses of the nanowire, the domain wall velocity, HWB, and demagnetizing field all decrease. By applying a vertical field from 0 to 1000 Oe in order to enhance the demagnetizing field, it is found the HWB is increased from 16 to 20 Oe.

UR - http://www.scopus.com/inward/record.url?scp=84904362067&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904362067&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2013.2273571

DO - 10.1109/TMAG.2013.2273571

M3 - Article

AN - SCOPUS:84904362067

VL - 50

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 1

M1 - 2273571

ER -