Activation mechanism of annealed Mg-doped GaN in air

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

The air-activation mechanism of annealed Mg-doped GaN and the influence of ambient on activation were discussed. It was observed that the dissociation of MgGa-H, and the formation of VGaH2 and gallium vacancies occupied by interstitial Mg during the air activation process. The process was found to led an increase in hole concentration. The results show that the formation of hydrogenated gallium vacancies during the air-activation process enhanced hydrogen desorption.

原文English
頁(從 - 到)2760-2762
頁數3
期刊Applied Physics Letters
84
發行號15
DOIs
出版狀態Published - 2004 四月 12

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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