A study on MoSe2 layer of Mo contact in Cu(In,Ga)Se2 thin film solar cells

Yi Cheng Lin, Ming Tsung Shen, Yung Lin Chen, Hung Ru Hsu, Cheng Han Wu

研究成果: Article

20 引文 斯高帕斯(Scopus)

摘要

This study investigated the influence of sputtering power and selenization on the thickness of the MoSe2, as it relates to the performance of Cu(In,Ga)Se2 (CIGS) thin film solar cells with a structure of glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Al. When the sputtering power exceeded 200 W (power density of 4.4 W/mm2) or the selenization temperature exceeded 773 K, the MoSe2 layer underwent a significant increase in thickness. The use of higher sputtering power to deposit the Mo contact resulted in superior Mo crystals and facilitated the formation of MoSe2 layers with hexagonal close-packed crystal structure during the selenization process. The thickness of the MoSe2 layer did not increase with soaking time during selenization. The highest device efficiency was obtained when the thickness of the MoSe2 layer was 240 nm.

原文English
頁(從 - 到)166-171
頁數6
期刊Thin Solid Films
570
發行號PB
DOIs
出版狀態Published - 2014 一月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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