A novel technique for low-threshold and high-power InGaAs/GaAs strained-layer 0.98-μm buried heterostructure laser fabrication

D. C. Liou, W. H. Chiang, C. P. Lee, K. H. Chang, D. G. Liu, J. S. Wu, Y. K. Tu

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

A novel fabrication technique has been developed for InGaAs/GaAs strained-layer buried heterostructure lasers. Dielectric masks and Zn diffusion are not required in this technique. This novel fabrication process is much easier than the conventional approach and yields excellent laser results. A low threshold of 3 mA and high-power operation for lasing wavelength of 9800±20 Å have been achieved with graded index separate confinement heterostructure devices using this novel technique.

原文English
頁(從 - 到)1525-1527
頁數3
期刊Journal of Applied Physics
71
發行號3
DOIs
出版狀態Published - 1992

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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