A novel selective growth of nanowire on CMOS MEMS compatible gas sensor

Jiong Heng Lu; Chuen Ren Jeng; Chih-Hsiung Shen; Shu Jung Chen

doi:10.1109/NMDC.2013.6707457

A novel selective growth of nanowire on CMOS MEMS compatible gas sensor

Jiong Heng Lu, Chuen Ren Jeng, Chih-Hsiung Shen, Shu Jung Chen

機電工程學系

研究成果: Conference contribution

1 引文斯高帕斯（Scopus）

摘要

In this paper, we proposed a new sensing mechanism which the sensing structure with zinc oxide (ZnO) nanowires to increase sensitivity. The ZnO nanowires are grown selectively on top of the sensing membrane with proposed ring-type electrodes which is implemented using 0.35μm CMOS MEMS process. The ZnO nanowire is achieved by chemical bath deposition (CBD) method with several prepared solutions, zinc acetate dihydrate and hexamethylenetetramine mixed at Zn(CH₃COO)₂·2H₂O C₆H ₁₂N₄=11, the others is zinc nitrate hexahydrate and hexamethylenetetramine mixed at Zn(NO₃)₂× 6H ₂O C₆H₁₂N₄=51. The growth of nanowires reveals a novel selective deposition on the metal layers of sensing area other than the passivation of Si₃N₄ which means a high specific definition of sensing region beyond the conventional sol-gel method. The research on selective growth of nanowire benefits the deposition of sensing material on certain active regions beyond the drawback of conventional sol-gel deposition. The advantages of the sensor are low cost and suitable for industrial production.

原文	English
主出版物標題	IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013
發行者	IEEE Computer Society
頁面	70-73
頁數	4
ISBN（列印）	9781479933877
DOIs	https://doi.org/10.1109/NMDC.2013.6707457
出版狀態	Published - 2013 一月 1
事件	2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013 - Tainan, Taiwan 持續時間: 2013 十月 6 → 2013 十月 9

Other

Other	2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013
國家	Taiwan
城市	Tainan
期間	13-10-06 → 13-10-09

All Science Journal Classification (ASJC) codes

Mechanics of Materials

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10.1109/NMDC.2013.6707457

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引用此

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abstract = "In this paper, we proposed a new sensing mechanism which the sensing structure with zinc oxide (ZnO) nanowires to increase sensitivity. The ZnO nanowires are grown selectively on top of the sensing membrane with proposed ring-type electrodes which is implemented using 0.35μm CMOS MEMS process. The ZnO nanowire is achieved by chemical bath deposition (CBD) method with several prepared solutions, zinc acetate dihydrate and hexamethylenetetramine mixed at Zn(CH3COO)2·2H2O C6H 12N4=11, the others is zinc nitrate hexahydrate and hexamethylenetetramine mixed at Zn(NO3)2× 6H 2O C6H12N4=51. The growth of nanowires reveals a novel selective deposition on the metal layers of sensing area other than the passivation of Si3N4 which means a high specific definition of sensing region beyond the conventional sol-gel method. The research on selective growth of nanowire benefits the deposition of sensing material on certain active regions beyond the drawback of conventional sol-gel deposition. The advantages of the sensor are low cost and suitable for industrial production.",

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Lu, JH, Jeng, CR, Shen, C-H & Chen, SJ 2013, A novel selective growth of nanowire on CMOS MEMS compatible gas sensor. 於 IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013., 6707457, IEEE Computer Society, 頁 70-73, 2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013, Tainan, Taiwan, 13-10-06. https://doi.org/10.1109/NMDC.2013.6707457

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